pub const GAN_LATTICE_CONSTANTS: HexagonalConstants;Expand description
Wurtzite gallium nitride: a = 3.1890 Å, c = 5.18500 Å at 300 K.
Yu. V. Melnik, K. V. Vassilevski, I. P. Nikitina, A. I. Babanin,
V. Yu. Davydov and V. A. Dmitriev, “Physical Properties of Bulk GaN
Crystals Grown by HVPE”, MRS Internet J. Nitride Semicond. Res. 2, 39
(1997), doi:10.1557/S1092578300001654 (open access), section 3.2
(PDF p. 3) and Table 1 (PDF p. 5, “GaN a and c lattice parameters
measured at 300 K”): the free-standing bulk crystal after an anneal at
1100 K that removed the residual strain, “c = 5.18500 Å, a = 3.1890 Å”
on both the N face and the Ga face, measured by the triple-crystal Bond
method on the (0004) and (11-24) reflections with a stated accuracy of
0.00005 Å for a and 0.00002 Å for c.