pub const SIC_4H_LATTICE_CONSTANTS: HexagonalConstants;Expand description
4H silicon carbide: a = 3.08051 Å, c = 10.0848 Å; temperature not
stated in the record read.
A. Bauer, P. Reischauer, J. Kräusslich, N. Schell, W. Matz and K. Goetz,
“Structure refinement of the silicon carbide polytypes 4H and 6H:
unambiguous determination of the refinement parameters”, Acta Cryst. A 57,
60 (2001), doi:10.1107/S0108767300012915, as reproduced in Mehl et al.
(2017), prototype AB_hP8_186_ab_ab (“Moissanite-4H SiC (B5)”),
pp. 423-424 and its CIF on p. 733: _cell_length_a 3.08051,
_cell_length_c 10.08480. The primary paper is closed access and was
not opened, so its measurement temperature is not known here.